s m a l l s i g n a l s c h o t t k y d i o d e s reverse v oltage: 70 v olts forward current: 70 ma rohs device page 1 rev :b features -design for mounting on small surface. -high speed switching application, circuit protection. -low turn-on voltage. mechanical data -case: sot -23, molded plastic. -t erminals: solderable per mil-std-750, method 2026. -approx. weight: 0.008 grams circuit diagram cdbt -70/s/c/a-g maximum ratings and electrical characteristics (at t a=25c unless otherwise noted) qw -ba003 comchip t echnology co., l td. cdbt -70-g 1 2 3 cdbt -70s-g 1 2 3 cdbt -70c-g 1 2 3 cdbt -70a-g 1 2 3 repetitive peak reverse voltage reverse voltage forward continuous current non- peak surge current repetitive forward power dissipation maximum forward voltage maximum reverse leakage current maximum reverse recovery time maximum diode capacitance junction temperature storage temperature units symbol parameter v rrm v r i f i fsm p d v f i r t rr c d t j t stg conditions v alue t=1.0 sec @i f =1.0ma @i f =15ma @v r =50v i f =i r =10ma, r l =100 , i rr =0.1*i r v r =0v , f=1.0mhz 70 70 70 100 200 410 1000 100 5 2 125 -55 to +150 v v ma ma mw mv na ns pf c c company reserves the right to improve product design , functions and reliability without notice. d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) s o t - 2 3 3 1 2 0.1 18(3.00) 0.1 10(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.012(0.30) 0.020(0.50) thermal resistance junction to ambient r ja 500 c/w
qw -ba003 ra ting and characteristic cur ves (cdbt -70/s/c/a-g) comchip t echnology co., l td. page 2 rev :b s m a l l s i g n a l s c h o t t k y d i o d e s company reserves the right to improve product design , functions and reliability without notice. forward v oltage, (v) fig.1 - forward characteristics f o r w a r d c u r r e n t , ( m a ) fig.2 - reverse characteristics r e v e r s e c u r r e n t , ( a ) reverse v oltage, (v) 0 fig.3 - capacitance characteristics 0 c a p a c i t a n c e b e t w e e n t e r m i n a l s , ( p f ) 0.5 1.0 2.0 3.0 30 60 70 ambient t emperature, (c) fig.4 - power derating curve 0 p o w e r d i s s i p a t i o n , ( m w ) 200 300 1.5 0 100 100 20 25 50 75 125 reverse v oltage, (v) 0.01 0 1 10 40 60 70 20 30 50 10 0.1 t a =25c 10 50 40 o t j =25 c f=1mhz t a =100c 1.0 0.6 0.4 0.8 0 0.01 0.1 1 10 100 0.2 t a =25c t a =100c 2.5 50 250 150
qw -b a003 comchip t echnology co., l td. page 3 rev :b s m a l l s i g n a l s c h o t t k y d i o d e s company reserves the right to improve product design , functions and reliability without notice. part number cdbt -70-g marking code 73 marking code cdbt -70a-g 76 cdbt -70c-g 75 xx 3 1 2 xx = product type marking code suggested p ad layout size (inch) 0.031 (mm) 0.80 1.90 2.02 0.075 0.080 sot -23 2.82 0.1 1 1 a b c d a c b d standard packaging c a s e t y p e 3 , 0 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k s o t - 2 3 cdbt -70s-g 74
|
